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Indium Antimonide | InSb

HTHP644

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Heeger Materials offers a selection of over 100 high purity products, including metals, metal oxides and metal salts, with 99.999% purity or higher. We can provide Indium Antimonide (InSb) with the purity of 99.99%, 99.999%,99.9999% and 99.99999% in size of ingot, lump and powder.

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Data sheet

SymbolInSb
Purity99.99%-99.999% (4N-5N)
Sizelump
ProductIndium antimonide
CAS1312-41-0

More info

Indium Antimonide (InSb) is a crystalline semiconductor made of antimony and indium. It belongs to the III-V group and is a narrow gap semiconductor material. Detectors made of indium antimonide are sensitive and lie between a wavelength of 1 and 5 µm. Indium antimonide was commonly used in mechanically scanned single detector thermal imaging systems.

High-purity and ultra-high purity Indium Antimonide (InSb) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

Applications

  • As a terahertz radiation source as it is a strong photo-Dember emitter
  • It finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems
  • In thermal image detectors using photo-electromagnetic detectors or photodiodes
  • In magnetic field sensors using the Hall effect or magneto-resistance
  • In fast transistors especially due to the high carrier mobility of InSb

Chemical Properties

The chemical properties of indium antimonide are provided in the table below:

Chemical Properties
Chemical FormulaInSb
Molecular Weight236.58 g/mol
CAS No.1312-41-0
IUPAC NameIndium antimonide
GroupIII-V
Band Gap0.17 eV
Band Gap TypeIndirect
Crystal StructureZinc Blende
Symmetry GroupTd2-F43m
Lattice Constant6.479 Angstroms

Electrical Properties

The electrical properties of indium antimonide are provided in the table below:

Electrical Properties
Intrinsic Carrier Concentration2x1016cm-3
Electron Mobility≤7.7x104cm2 V-1 s-1
Hole Mobility≤850 cm2 V-1 s-1
Electron Diffusion Coefficient≤2x103 cm2 s-1
Hole Diffusion Coefficient≤22 cm2 s-1
Electrical resistivity4x10-13Ωcm

Thermal, Mechanical and Optical Properties

The thermal, mechanical and optical properties of indium antimonide are provided in the tables below:

Mechanical Properties
Melting Point527 °C
Density5.775 g cm-3
Bulk Modulus4.7•1011 dyn cm-2
Thermal Properties
Thermal Conductivity0.18 W cm-1 °C-1
Thermal Diffusivity0.16 cm2 s-1
Thermal Expansion Coefficient5.37x10-6 °C-1
Optical Properties
Refractive Index (589 nm @ 293 K)4
Radiative Recombination Coefficient (@ 300 K)5x10-11 cm3 s-1

Safety Information

Safety Information
GHS Hazard StatementsH302-Harmful if swallowed
H332-Harmful if inhaled
H411-Toxic to aquatic life with long-lasting effects
Safety PrecautionsS 61

Packing:

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.

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