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Heeger Materials offers a selection of over 100 high purity products, including metals, metal oxides and metal salts, with 99.999% purity or higher. We can provide Indium Antimonide (InSb) with the purity of 99.99%, 99.999%,99.9999% and 99.99999% in size of ingot, lump and powder.
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Availability date: 03/01/2013
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Indium Antimonide (InSb) is a crystalline semiconductor made of antimony and indium. It belongs to the III-V group and is a narrow gap semiconductor material. Detectors made of indium antimonide are sensitive and lie between a wavelength of 1 and 5 µm. Indium antimonide was commonly used in mechanically scanned single detector thermal imaging systems.
High-purity and ultra-high purity Indium Antimonide (InSb) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.
The chemical properties of indium antimonide are provided in the table below:
|Molecular Weight||236.58 g/mol|
|IUPAC Name||Indium antimonide|
|Band Gap||0.17 eV|
|Band Gap Type||Indirect|
|Crystal Structure||Zinc Blende|
|Lattice Constant||6.479 Angstroms|
The electrical properties of indium antimonide are provided in the table below:
|Intrinsic Carrier Concentration||2x1016cm-3|
|Electron Mobility||≤7.7x104cm2 V-1 s-1|
|Hole Mobility||≤850 cm2 V-1 s-1|
|Electron Diffusion Coefficient||≤2x103 cm2 s-1|
|Hole Diffusion Coefficient||≤22 cm2 s-1|
The thermal, mechanical and optical properties of indium antimonide are provided in the tables below:
|Melting Point||527 °C|
|Density||5.775 g cm-3|
|Bulk Modulus||4.7•1011 dyn cm-2|
|Thermal Conductivity||0.18 W cm-1 °C-1|
|Thermal Diffusivity||0.16 cm2 s-1|
|Thermal Expansion Coefficient||5.37x10-6 °C-1|
|Refractive Index (589 nm @ 293 K)||4|
|Radiative Recombination Coefficient (@ 300 K)||5x10-11 cm3 s-1|
|GHS Hazard Statements||H302-Harmful if swallowed|
H332-Harmful if inhaled
H411-Toxic to aquatic life with long-lasting effects
|Safety Precautions||S 61|