2. Products
  3. High Purity Materials
  4. Semiconductor Materials
  5. Indium Antimonide | InSb

Sale! View larger

Indium Antimonide | InSb

HTHP644

New product

Heeger Materials offers a selection of over 100 high-purity products, including metals, metal oxides, and metal salts, with 99.999% purity or higher. We can provide the best Indium Antimonide (InSb) with a purity of 99.99%, 99.999%,99.9999%, and 99.99999% in size of ingot, lump, and powder.

More details

Inquiry

Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.

Data sheet

SymbolInSb
Purity99.99%-99.999% (4N-5N)
Sizelump
ProductIndium antimonide
CAS1312-41-0

More info

Indium Antimonide (InSb) is a crystalline semiconductor made of antimony and indium. It belongs to the III-V group and is a narrow-gap semiconductor material. Detectors made of indium antimonide are sensitive and lie between a wavelength of 1 and 5 µm. Indium antimonide was commonly used in mechanically scanned single-detector thermal imaging systems.

High-purity and ultra-high-purity Indium Antimonide (InSb) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

Indium Antimonide | InSb

Applications

  • As a terahertz radiation source, it is a strong photo-dember emitter.
  • It finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy, and infrared-homing missile guidance systems.
  • In thermal image detectors using photo-electromagnetic detectors or photodiodes.
  • In magnetic field sensors using the Hall effect or magneto-resistance.
  • In fast transistors especially due to the high carrier mobility of InSb.

Chemical Properties

The chemical properties of indium antimonide are provided in the table below:

Chemical Properties
Chemical FormulaInSb
Molecular Weight236.58 g/mol
CAS No.1312-41-0
IUPAC NameIndium antimonide
GroupIII-V
Band Gap0.17 eV
Band Gap TypeIndirect
Crystal StructureZinc Blende
Symmetry GroupTd2-F43m
Lattice Constant6.479 Angstroms

Electrical Properties

The electrical properties of indium antimonide are provided in the table below:

Electrical Properties
Intrinsic Carrier Concentration2x1016cm-3
Electron Mobility≤7.7x104cm2 V-1 s-1
Hole Mobility≤850 cm2 V-1 s-1
Electron Diffusion Coefficient≤2x103 cm2 s-1
Hole Diffusion Coefficient≤22 cm2 s-1
Electrical resistivity4x10-13Ωcm

Thermal, Mechanical and Optical Properties

The thermal, mechanical, and optical properties of indium antimonide are provided in the tables below:

Mechanical Properties
Melting Point527 °C
Density5.775 g cm-3
Bulk Modulus4.7•1011 dyn cm-2
Thermal Properties
Thermal Conductivity0.18 W cm-1 °C-1
Thermal Diffusivity0.16 cm2 s-1
Thermal Expansion Coefficient5.37x10-6 °C-1
Optical Properties
Refractive Index (589 nm @ 293 K)4
Radiative Recombination Coefficient (@ 300 K)5x10-11 cm3 s-1

Safety Information

Safety Information
GHS Hazard StatementsH302-Harmful if swallowed
H332-Harmful if inhaled
H411-Toxic to aquatic life with long-lasting effects
Safety PrecautionsS 61

Packing:

Indium Antimonide (InSb) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements. 

Inquiry to Heeger Materials

Items marked with an asterisk (*) are required.
Please include item quantity, size and purity.
Privacy Information:

Heeger Materials respects your privacy, and we will NOT sell or provide your personal data to other third parties, or allow them to use your personal data for their own purposes. However, we would like to send you information from time to time by mail or email about our products and special offers in addition to the interest categories you've selected above. Read our Privacy Policy

30 other products in the same category: